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NTE1177 Integrated Circuit TV Luminance Processor
Description: The NTE1177 is a monolithic silicon integrated circuit in a 14-Lead DIP type package that performs the luminance processing functions of amplification; contrast, brightness and peaking control; blanking; and black-level clamping. Features: D Black-Level Clamping D Linear DC Controls for Brightness, Contrast, and Peaking D Horizontal and Vertical Blanking D Operates with Standard or Tapped Delay Line Absolute Maximum Ratings; DC Supply Current (Into Pin13, Note 1), VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59.5mA Device Dissipation (Up to TA = +55C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.9mW/C Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265C Note 1. Although the NTE1177 is rated for maximum dissipation of 750mW, it is recommended that the current into Pin13 be limited by external circuit resistance to 39mA for a typical voltage at Pin13 of 11.8V. Electrical Characteristics: (TA = +25C unless otherwise specified)
Test Conditions Switch Numbers S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 Switch Positions For Characteristic Measurements Parameter Symbol Static Characteristics (Bias Voltage = 6.1V) Voltage at Pin13 Quiescent Voltage V13 V4 V7 Current Into Pin13 Pin13 Connected to +11V I13 2 2 2 2 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 4 3 2 3 1 1 1 1 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 2 Min 11.0 3.3 7.1 10 Typ Max Unit V V V mA
11.8 13.2 4.0 7.7 19 5.7 8.3 30
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Test Conditions Switch Numbers S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 Switch Positions For Characteristic Measurements Parameter Dynamic Characteristics (Bias Voltage = 5.8V) Wide-Band Gain (Note 2) Contrast Gain Reduction (Note 3) Peaking Gain (Note 2) Peaking Gain Reduction (Note 4) Max. Intermodulation Distortion 2V (Note 5) 3V (Note 6) 1 1 1 1 1 1 1 1 1 1 - - 1 1 2 2 1 1 2 2 2 2 1 1 1 1 1 1 1 1 2 2 2 2 2 2 1 1 1 1 - - 1 1 1 1 2 2 1 2 1 1 1 1 2 2 2 2 2 2 1 1 1 1 1 1 Min 6.0 27 Typ 8.3 30 Max Unit 11.0 - dB dB dB dB % %
15.0 18.4 22.0 16 - - 18 20 40 - - -
Note 2. Set 50kHz generator for 100mVP-P Adjust R1 Peaking Control for minimum setting. Measure wide-band gain at Pin7. Note 3. Set 50kHz generator for 100mVP-P. Adjust R1 for minimum setting. Measure contrast gain reduction at Pin7. Note 4. Set 50kHz generator for 100mVP-P. Adjust R1 for maximum setting. Measure peaking gain reduction at Pin7. Note 5. Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set 50kHz generator for 2VP-P. Then with S2 at switch position 2, set 1MHz generator for 100mVP-P. Then with S7 at switch position 2, measure downward modulation of the 1MHz signal due to the 50kHz signal. Note 6. Repeat step 5 except that the 50kHz generator must be set at 3VP-P.
14 Pin Connection Diagram 1
8
Video Input 1 Peaking Input 2 Peaking Input 3 Video Output 4 Substrate GND 5 Clamp Inhibit 6 Clamped Video Out 7
14 N.C. 13 Shunt Regulator and Bypass 12 Clamp Inhibit Input 11 Peaking Control 10 Contrast Control 9 Blanking Input 8 Brightness Control
7
.785 (19.95) Max .200 (5.08) Max
.300 (7.62)
.100 (2.45) .600 (15.24)
.099 (2.5) Min

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